0.13μm柵極刻蝕工藝研究

1、復旦大學碩士學位論文0.13μm柵極刻蝕工藝研究姓名：陳晉申請學位級別：碩士專業(yè)：電子與通信工程指導教師：黃宜平20051022◆●●013urn柵極刻蝕T豈研究防晉復旦大學研究生院AbstractTheindustryofsemiconductorintegratedcircuitsisatypicaltechnology—drivenindustry，andthemomentumforitsfastupgrading1iesinth

2、erapidtechn01091caldevelopmentIntegratedcircuitshave，therefore，becomethemostimportantmaterialbasisforglobalizationandknowledge—basedeconomytodayandsemiconductortechniqueshavebecomeasystematicengineeringwiththehighestprec

3、ision，difficulty，techn0109icaldensity，anddevelopmentspeedamongallprocessingtechniques1Analysisofthetheoryofetchingprocess2Recipeof013umgateetchingtuning3Finetune013umgateetchingrecipe，modifythekeyparameterofrecipe4。Induc

4、eetchinguniformity，improvetheyieldoftheproduct5Extendtherecipewindowformass—productionEtchingisthechemicalorphysicalprocessselectivelyremovingunwantedmaterialsonsiliconsurfacesThebasicgoalofetchingistocorrectlycopythemas

5、kpatternonthesiliconchipcoveredbyphotoresistivematerialsThephotoresistivelayerdoesnotgetetchedsignificantlyduringetchingprocessandprotectsthecertainareasofthesiliconchipsothattheotherintentlyunprotectedareascanbeselectiv

6、elyetchedInthissense，etchingcanbeconsideredasthefinalmaskpatterntransferstepfordesiredpatternreplicationonsiliconchipsThispaperanalyzesprinciplesandapplicatlonsofetchingprocessindetailandfocusesontheadvanced013umgateetch

7、ingtechniqueAseriesofexperimentshasbeenaccomplishedforetchingrecipetuningpurposeSomeofthekeyparametersinetchingrecipehavebeenad3ustedsothatthewldthandtheshapeofthegatecanbealteredasdesiredTMsworkplaysaverymportantroleina

8、chievingmass—producingfor013umetchingtechniqueHlghlightsofthemodlfledrecipeareasfollows，1Theideal013umgatewldthisreallzed2Gateproflleissignlficantlycorrectedsothatthechip’sflnalelectricalcharacteristicsarecompletelysatis