深亞微米應(yīng)變硅器件的模擬研究.pdf

1、江南大學(xué)碩士學(xué)位論文深亞微米應(yīng)變硅器件的模擬研究姓名：施昊申請學(xué)位級別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：顧曉峰20090801AbstractAbstractWiththerapiddevelopmentofintegratedcircuit(IC)technology，thefeaturesizeoftransistorshasadvancedtothedeepsubmicron，orevenultradeepsubmicro

2、n(nanometer)levelImprovingtheperformanceofcurrentmainframeCMOSdevicesbycontinuingusingthescalingrulehasencounteredmoreandmorephysicalandprocesslimitationsItisthusnecessarytostudynewmaterials，newpropertiesandnovelstructur

3、escompatible謝mcurrentSiprocesstechnologySOthatthehighdevelopingspeedofICtechnologypredictedbyMoore’SLawcanbemaintainedThishasbeencommonlyacknolowdgedbybothacademicresearchersandindustryexpertsRecentlystrainedSitechnology

4、andnovelFinFETstructurehaveattractedwideaRentionduetotheirexcellentperformanceinboostingCMOSpropertiesTakethetypicalCMOSstrainedSideviceasanexample，thecompressivechannelstressinPMOSdevicecatlusuallybeproducedbyepitaxialS

5、iGesource／drainordepositingSiNcompressivelinerTheholemobilityCanbeincreasedbycontrollingtheamountofcompressivestrainAsaresult，thedeviceperformanceCanthusbeimprovedOntheotherhand，thetensilechannelstressinNMOSdevicecanusua

6、llybeintroducedbythestressmemorytechnology(SMT)anddepositingSiNtensilelinesTheelectronmobilityaswellasthedeviceperformance，CanbeenhancedbycontrollingtheamountoftensilestrainTherefore，optimizingtheprocessandstructureparam

7、etersofdeepsubmicronornanoscalesemiconductordevices，studyingtheeffectofstressondevicecharacteristics，areofgreatimportanceforscienceandpracticalapplicationsInmostcases，however，theaccuratemeasurementoflocalmicroscopicstres

8、sandstrainin(ultra)deepsub—micronsemiconductorstructuresmustresorttocomplicatedmicrostructureanalysistoolsSincethereislittleworkreportingthedomesticresearchprogressinthestressdistributionandthestress—deviceperformancerel

9、ationshipbyexperiment，thisthesisattemptedtoinvestigatethesenewsemiconductorstructuresbytwo—dimensionalsimulationusingTCADtoolsTheemphasisWasputonthepossibilityofintroducingthestrainengineeringintoCMOSdevicesandtheireffec

10、tsondeviceperformanceBesides，threedimensionalsimulationstudywasalsoperformedonOmegaFinFETInthepracticalwork，thetypicalstainedSiCMOSdevicewasfirstlyinvestigatedbySentaurusThesimulatonresultsindicatedthatsomekeyelectricalc

11、haracteristics，suchastheonoffcurrentratio(Ioll／Io療)ofthedeviceWasingoodagreementwithexperimentallymeasureddataindevicesmanufacturedusingthesimilarprocesstechnologyverifyingthecorrectnessoftheadoptedmodelandtechnologyroad

12、mapSecondlyvariousstressintroductioncombinationswereproposedThedependenceofstressdistributionondeviceparametersWasobtainedbysimulationTheresultsshowedthatkeyelectricalperformance，suchasthethresholdvoltage，IonIoffandsubth

13、resholdcharacteristics，couldbesignificantlyimprovedbythestressengineeringTheCMOSdeviceperformanceWasthussignificantlyenhancedMoreover，thedependenceofchannelstressanddeviceperformanceontheGemolarfractioninPMOS，aswellasthe