RTD-HEMT-MSM光電集成研究.pdf

1、。餓天覺巨大薯碩士焉壘位論文學(xué)科專業(yè)：微電子學(xué)與固體電子學(xué)作者姓名：李益歡指導(dǎo)教師：梁惠來副教授“1：擊—L堅(jiān)芻ZⅡ—≈盧卜曙白1厴1。／￥rr5石VABSTRACTTheoptoelectricalintegratedcircuit(OEIC)isattractiveinlightwavecommunicationsystemsbecauseofitsabilityofelectricallogic，opticaldetectinga

2、ndreceiving，itshi曲performanceandsmallsizeThefurtherresearchonoptoelectficalintegrationtechnologyofResonantTunnelingDiode(RTD)，HighElectronMobilityTransistor(HEMT)andMetalSemiconductorMetalPhotoDetector(MSMPD)hasbeendoneR

3、TD／HEMT／MSMdesigntheorymaterialdesignandprocesspreparation，devieceandcircuitsimulation，measurementoftheirapplicationcircuitsarestudiedinthisdissertationThemainproductsofthisdissertationareasfollows1Therelationsbetweenthe

4、parametersinRTDPSpicedevicemodelandsimulationcurvesareanalysedThevaluesofthoseparametersaredefinitelymodifiedformodelingthefabricatedRTDdevices2HEMTdevicesimulationisperformedbyISE—TCADsoftwareItsoutputcharacteristiciscl

5、osetoexperimentresults，whichshowssomeinstructionsindeviceoptimizationandapplicationcircuitsimulation3ThemethodofmakingMSMonsemiinsulatedsubstrateisamendedEtchingthesubstrateintoconverted—stepshapebeforesputteringmetalcan

6、dramaticallyimprovetheopticalresponseofMSMPD4Twokindsofmonolithicalopto—controllednegativedifferencesolidcircuitsarefabricated‘Oneisallopto—controlledswitch，composedofaRTDdriverserialyconnectedbyaMSMloaderTheotherisanopt

7、o—controlledconverterwhichconsistsofaRTDdriverparallelyconnectedbyaMSMinputasanopticalgateandaRTDloaderThecircuits’logicalfunctionissimulatedbyPSpicebasedOilthebuildedRTDandMSMcircuitmodelsBycompareingthesimulationresult

8、swiththetestedresults，theworkingtheoryandlogicalfunctionofthecircuitsarevalidatedAsfarasweknowthelabricatedcircuitsarenotreportedindomesticandaboardpapersKEYWORDS：ResonantTunnelingDiode呷D)，HighElectronMobilityTransistor(