0.11μmdram技術(shù)中深溝壑底部光阻殘余物去除工藝的改善研究

1、上海交通大學(xué)碩士學(xué)位論文0.11μm DRAM技術(shù)中深溝壑底部光阻殘余物去除工藝的改善研究姓名：陸騫申請學(xué)位級別：碩士專業(yè)：軟件工程（集成電路）指導(dǎo)教師：程秀蘭;程秀蘭20081214上海交通大學(xué)碩士學(xué)位論文 IIImprovement of photo resist remove for the 11μm DRAM deep trench capacitor process Improvement of pho

2、to resist remove for the 11μm DRAM deep trench capacitor process In the semiconductor wet cleaning, sulfuric acid and hydrogen peroxide mixed system (referred to as SPM) used to resist the removal and cle

3、aning process, which is a more mature process。But the practice was found on the SPM photo-resist removal and cleaning process , which will cause a lot of anomalies. Especially for advanced DRAM technology, when u

4、sing SPM remove the resist at the bottom of deep trench, resist residue always can be found. This article is based on the practice of production defects, and analyzes the main components ( sulfuric peroxide )

5、of the mixed system of influence photo resist removal process. through experiments and analysis of various factors on the peroxide concentration of sulfuric acid. According to the current widely used in the pr

6、oduction of technology, introduce how to control factors related to the regulation, to be stable and sound effects photo resist removal. This article focused on one better way to remove the resist at the botto

7、m of deep trench during 0.11DRAM capacitor manufacturing process. By the large number of comparative experiments carried out investigation and analysis and use of advanced experimental equipment and devices, Wet bench

8、, high degree of electronic scanning equipment, optical instruments and advanced analysis of defective equipment, to find the causes of defects and deficiencies found to avoid the production. After the hard wo

9、rk ,finally, the concentration of sulfuric peroxide has been confirmed as the key factor of the photo resist remove process in the deep trench. And define two actions for the process optimize, raising the