powerpoint簡報(bào)-尋材問料讓天下沒有難找的材料

1、半導(dǎo)體封裝制程與設(shè)備材料知識簡介,半導(dǎo)體封裝制程概述,半導(dǎo)體前段晶圓wafer制程半導(dǎo)體后段封裝測試封裝前段（B/G-MOLD）－封裝后段（MARK-PLANT）－測試封裝就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨(dú)立分離，並外接信號線至導(dǎo)線架上分離而予以包覆包裝測試直至IC成品。,,,半 導(dǎo) 體 制 程,封 裝 型 式 (PACKAGE),封 裝 型 式,封 裝 型

2、 式,封 裝 型 式,封 裝 型 式,封 裝 型 式,Assembly Main Process,Die Cure(Optional),Die Bond,Die Saw,,,,Plasma,,,Card Asy,Memory Test,Cleaner,,,,Card Test,,Packing for Outgoing,Detaping(Optional),Grinding(Optional

3、),Taping(Optional),,,,WaferMount,,UV Cure(Optional),,,,,,,Laser mark,Post Mold Cure,Molding,,,,Laser Cut,,Package Saw,,,,Wire Bond,SMT(Optional),,,,,半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分,,半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分,常用術(shù)語介紹,SOP-Standard Operation Proc

4、edure 標(biāo)準(zhǔn)操作手冊WI – Working Instruction 作業(yè)指導(dǎo)書 PM – Preventive Maintenance 預(yù)防性維護(hù)FMEA- Failure Mode Effect Analysis 失效模式影響分析SPC- Statistical Process Control 統(tǒng)計(jì)制程控制DOE- Design Of Experiment 工程試驗(yàn)設(shè)計(jì)IQC/OQC-Incoming/Outing

5、 Quality Control 來料/出貨質(zhì)量檢驗(yàn)MTBA/MTBF-Mean Time between assist/Failure 平均無故障工作時(shí)間CPK-品質(zhì)參數(shù)UPH-Units Per Hour 每小時(shí)產(chǎn)出 QC 7 Tools ( Quality Control 品管七工具 ) OCAP ( Out of Control Action Plan 異常改善計(jì)劃 ) 8D ( 問題解決八大步驟 ) ECN En

6、gineering Change Notice ( 制程變更通知 ) ISO9001， 14001 – 質(zhì)量管理體系,,前道ＦＯＬ,后道EOL,Wire Bond引線鍵合,Mold模塑,Laser Mark激光印字,Laser Cutting激光切割,,,,,,EVI產(chǎn)品目檢,SanDisk Assembly Process Flow SanDisk 封裝工藝流程,,Die Prep

7、are芯片預(yù)處理,Ｄie Attach芯片粘貼,,,Wafer IQC來料檢驗(yàn),,,,Plasma Clean清洗,,Plasma Clean清洗,,Saw Singulation切割成型,,SMT表面貼裝,,,PMC模塑后烘烤,,SMT（表面貼裝）---包括錫膏印刷(Solder paste printing),置件(Chip shooting),回流焊(Reflow),DI水清洗(DI water cleanin

8、g),自動光學(xué)檢查(Automatic optical inspection),使貼片零件牢固焊接在substrate上,Die Prepare(芯片預(yù)處理) To Grind the wafer to target thickness then separate to single chip---包括來片目檢(Wafer Incoming), 貼膜(Wafer Tape),磨片(Back Grind),剝膜(Detape),貼片(W

9、afer Mount),切割(Wafer Saw)等系列工序,使芯片達(dá)到工藝所要求的形狀,厚度和尺寸,并經(jīng)過芯片目檢(DVI)檢測出所有由于芯片生產(chǎn),分類或處理不當(dāng)造成的廢品.,,,,,,,,,,,,,,,,,,,,,,,,,,Wafer tape,Back Grind,Wafer Detape,Wafer Saw,Inline Grinding & Polish -- Accretech PG300RM,,,Transfer

10、,Key Technology: 1. Low Thickness Variation: +/_ 1.5 Micron2. Good Roughness: +/- 0.2 Micron3. Thin Wafer Capacity: Up to 50 Micron4. All-In-One solution , Zero Handle Risk,2.Grinding 相關(guān)材料A TAPE麥拉B Grinding 砂輪C

11、 WAFER CASSETTLE,工藝對TAPE麥拉的要求：,1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack,,,,,,,,,,,,,,工藝對麥拉的要求：,3。EXPANDINGTAPE Die distanceELONGATION Unifor

12、mity 4。PICKING UPWEAKADHESIONNo contamination,,,,,,,,,,,,,,,,,,,,,,3.Grinding 輔助設(shè)備A Wafer Thickness Measurement 厚度測量儀 一般有接觸式和非接觸式光學(xué)測量儀兩種；B Wafer roughness Measurement 粗糙度

13、測量儀 主要為光學(xué)反射式粗糙度測量方式；,4.Grinding 配套設(shè)備A Taping 貼膜機(jī)B Detaping 揭膜機(jī)C Wafer Mounter 貼膜機(jī),Wafer Taping -- Nitto DR300II,,,,,,,,,,,,,,,,,,,,,Cut Tape,Taping,Alignment,Transfer,,Transfer Back,Key Technology: 1. High Trans

14、fer Accuracy: +/_ 2 Micron2. High Cut Accuracy : +/- 0.2 mm3. High Throughput : 50 pcs wafer / Hour4. Zero Void and Zero Wafer Broken,,,Detaping,l  Wafer mount,,,,,,Wafer frame,晶 圓 切 割 (Dicing),Dicing

15、 設(shè)備:A DISCO 6361 系列B ACCERTECH 東京精密AW-300T,Main Sections Introduction,Cutting Area: Spindles (Blade, Flange, Carbon Brush), Cutting Table, Axes (X, Y1, Y2, Z1, Z2, Theta), OPCLoader Units: Spinner, Elevator, Cassett

16、e, Rotation Arm,Blade Close-View,,Blade,,,Cutting WaterNozzle,,Cooling Water Nozzle,Die Sawing – Disco 6361,,,Key Technology:,1. Twin-Spindle Structure.2. X-axis speed: up to 600 mm/s. 3. Spindle Rotary Speed : Up to

17、 45000 RPM.4. Cutting Speed: Up to 80mm/s.5. Z-axis repeatability: 1um.6. Positioning Accuracy: 3um .,Rear,Front,A Few Concepts,BBD (Blade Broken Detector)Cutter-set: Contact and OpticalPrecision Inspecti

18、onUp-Cut and Down-CutCut-in and Cut-remain,晶 圓 切 割 (Dicing),Dicing 相關(guān)工藝A Die Chipping 芯片崩角B Die Corrosive 芯片腐蝕C Die Flying 芯片飛片,Wmax , Wmin , Lmax , DDY ,DY,,規(guī)格—DY< 0.008mmWmax < 0.070mmWmin < 0.8*刀厚

19、Lmax < 0.035,切割時(shí)之轉(zhuǎn)速予切速:a.       轉(zhuǎn)速 : 指的是切割刀自身的轉(zhuǎn)速b.      切速: 指的是Wafer移動速度.,主軸轉(zhuǎn)速:S1230: 30000~45000 RPMS1440: 30000~45000 RPM27HEED: 35000~45000 RP

20、M27HCCD: 35000~45000 RPM27HDDC: 35000~45000 RPM,晶 圓 切 割 (Dicing),3.Dicing 相關(guān)材料A Tape B Saw BLADE 切割刀C DI 去離子水、RO 純水,切割刀的規(guī)格規(guī)格就包括刀刃長度、刀刃寬度、鑽石顆粒大小 、濃度及Nickel bond hardness 軟硬度的選擇,,P4,Saw blade 對製程的影響 ? Proper Cu

21、t Depth Into Tape (切入膠膜的理想深度 ),分析 :理想的切割深度可防止1. 背崩之發(fā)生。2. 切割街區(qū)的DDY 理想的切割深度須切入膠膜 (Tape) 1/3厚度。,P11,切割刀的影響 ? Diamond Grit Size (鑽石顆粒大小),分析 :小顆粒之鑽石1. 切割品質(zhì)較好。2. 切割速度不宜太快。3. 刀子磨耗較大。大顆粒之鑽石1. 刀子磨耗量小。2. 切割速度可較快。3

22、. 負(fù)載電流較小。,P15,TAPE 粘度對SAW製程的影響 ? Mounting Tape (膠膜黏力 ),分析 :使用較黏膠膜可獲得1. 沒有飛 Die。2. 較好的切割品質(zhì)。潛在風(fēng)險(xiǎn) Die Attach process pick up die 影響。,P10,晶 圓 切 割 (Dicing),4.Dicing 輔助設(shè)備A CO2 Bubbler 二氧化碳發(fā)泡機(jī)B DI Water 電阻率監(jiān)測儀C

23、 Diamonflow 發(fā)生器D UV 照射機(jī),Die Attach(芯片粘貼) To attach single die to SMTed substrate---把芯片粘貼到已經(jīng)過表面貼裝(SMT)和預(yù)烘烤(Pre-bake)后的基片上,或芯片粘貼到芯片上,并經(jīng)過芯片粘貼后烘烤(Die Attach Cure)固化粘結(jié)劑.,,Passive chip(capacitor),Substrate,,,,,,,上片 (Die Bon

24、d),Die Bond 設(shè)備A HITACHI DB700 B ESEC2007/2008 系列C ASM 829/889/898 系列,Die Attach – Hitachi DB700,,,Key Technology:,1. Bonding speed: 30ms/die; 2. Bonding Accuracy X/Y: 25 um; 3. Angle Accuracy : 0.5 degree; 4. Thin

25、Die Pick Up Solution: Up to 2 mils (Electromagnetic & Multi-Step Mode);5. Integrate & Inline Module : X Memory + 1 controller; 6. Multi-Die stack Die Capacity: Up to 8 layers once;,上片 (Die Bond),2.Die B

26、ond 相關(guān)工藝,上片 (Die Bond),3.Die Bond 相關(guān)材料A Substrate / Lead frame B Die Attach FilmC Wafer after Saw D Magazine 彈夾,Substrate,Basic Structure:,Substrate Basic Information,Core：玻璃纖維+樹脂，0.1-0.4mm鍍銅層：25um+/-5um鍍鎳層：5.0-

27、12.5um鍍金層：0.50-1.10umSolder Mask：25um+/-5um總厚度：0.10-0.56mm,,發(fā)料烘烤,,線路形成(內(nèi)層),AOI自動光學(xué)檢測,壓合,,,4 layer,2 layer,,蝕薄銅,綠漆,線路形成,塞孔,鍍銅,Deburr,鑽孔,鍍Ni/Au,包裝,終檢,O/S電測,成型,,,,,,,AOI自動光學(xué)檢測,,,,,,出貨,,BGA基板製造流程,(option),上片 (Die Bond),

28、4.Die Bond 輔助設(shè)備A 銀漿攪拌機(jī) 利用公轉(zhuǎn)自轉(zhuǎn)離心力原理脫泡及混合；主要參數(shù)有：MIXING/DEFORMING REVOLUTION SPEED 外加計(jì)時(shí)器；公轉(zhuǎn)用于去泡；自轉(zhuǎn)用于混合；,B Curing Oven 無氧化烤箱主要控制要素：N2 流量；排氣量；profile 溫度曲線；每箱擺放Magazine 數(shù)量；,C Wafer mapping 應(yīng)用,,Wire Bond(引線鍵合) Die to P

29、ackage InterconnectsHow a die is connected to the package or board. ---用金線將芯片上的引線孔和基片上的引腳連接，使芯片能與外部電路相連。在引線鍵合前需要經(jīng)過等離子清洗(Pre-Bond Plasma Clean)以保證鍵合質(zhì)量,在引線鍵合后需要經(jīng)過內(nèi)部目檢(IVI),檢測出所有芯片預(yù)處理,芯片粘貼和引線鍵合產(chǎn)生的廢品.,Wire Bond – K&S

30、Ultra,,,Key Technology:,1. Die pad opening(Min.): 45um.2. Die pads pitch (Min.): 60 µm . 3. Substrate Lead width & Pitch (Min.): 40 µm & 25 µm.4. Multi-Loop Selection cover all Pack

31、age.5. Stack die reverse Bonding to Decrease Total package Thickness.,,,,,Die Pad,,,,,,,,,,,,,,Substrate Lead,Gold Wire,Capillary,,,Ultrasonic Power,Heater,,Bond Force,焊線(Wire Bond),1.Wire Bond 相關(guān)工藝 Pad Open & B

32、ond Pad Pitch Ball Size Ball Thickness Loop height Wire Pull Ball short Crater Test,焊線(Wire Bond),2.Wire Bond 相關(guān)材料,Substrate with die Capillary Gold Wire,How To Design Your Capillary,TIP ..…… Pad Pitch

33、 Pad pitch x 1.3 = TIPHole ..…. .Wire Diameter Wire diameter + 0.3~0.5 = HCD………Pad size/open/1st Ball CD + 0.4 ~ 0.6 = 1st Bond Ball sizeFA & OR….Pad pitch(um)

34、 FA >1000,4 ~90/1004,8,11 <9011,15IC type …… loop type,Capillary,,Gold Wire,Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA….

35、 ) Gold Wire Data ( Wire Diameter , Type , EL , TS),焊線(Wire Bond),3.Wire Bond 輔助設(shè)備A Microscope 用于測loop heightB Wire Pull 拉力計(jì)（DAGE4000）C Ball Shear 球剪切力計(jì)D Plasma 微波/等離子清洗計(jì),Ball Size,Ball Thickness,單位: um，Mil 量

36、測倍率: 50X Ball Thickness 計(jì)算公式 60 um BPP ≧ 1/2 WD=50% 60 um BPP ≦ 1/2 WD=40%~50%,,,,Ball Size,Ball Size & Ball Thickness,,Loop Height,單位: um，Mil 量測倍率: 20X,,,Loop Height,線長,,,Wire Pull,1 Lifted Bond (Rejected) 2

37、Break at neck (Refer wire-pull spec) 3 Break at wire ( Refer wire-pull spec) 4 Break at stitch (Refer stitch-pull spec) 5 Lifted weld (Rejected),,Ball Shear,單位: gram or g/mil² Ball Shear 計(jì)算公式 Intermetallic（I

38、MC有75%的共晶,Shear Strength標(biāo)準(zhǔn)為＞6.0g/mil²。SHEAR STRENGTH＝Ball Shear/Area (g/mil²) Ball Shear = x; Ball Size = y; Area = π(y/2) ² x/π(y/2) ² = z g/mil²,等離子工藝Plasma Process,氣相---

39、固相表面相互作用 Gas Phase - Solid Phase InteractionPhysical and Chemical分子級污染物去除Molecular Level Removal of Contaminants30 to 300 Angstroms可去除污染物包括 Contaminants Removed難去除污染物包括 Difficult Contaminants Finger PrintsF

40、luxGross Contaminants,OxidesEpoxySolder Mask,Organic ResiduePhotoresistMetal Salts (Nickel Hydroxide),Plasma Clean – March AP1000,,,Key Technology:,1. Argon Condition, No oxidation.2. Vacuum Pump dust collector.3.

41、 Clean Level : blob Test Angle < 8 Degree.,,,,,,,,,,Plasma,PCB Substrate,Die,,,,,,,,,,,,+,,,,,,,+,,+,,+,,+,,+,,+,,+,,+,,+,,+,,Electrode,,,+,Ar,,,Well Cleaned with Plasma,,,? < 8 o,Chip,Ar,Ar,,,,,,No Clean (Organi

42、c Contamination),Well Cleaned with Plasma,,?,,? > 80 o,,,? < 8 o,Organic Contamination vs Contact Angle,Water Drop,Chip,Chip,,Mold(模塑)To mold strip with plastic compound then protect the chip to prevent from damag

43、ed--塑封元件的線路，以保護(hù)元件免受外力損壞，同時(shí)加強(qiáng)元件的物理特性,便于使用.在模塑前要經(jīng)過等離子清洗(Pre-Mold Plasma Clean),以確保模塑質(zhì)量.在模塑后要經(jīng)過模塑后固化(Post Mold Cure),以固化模塑料.,塑封 (Molding),Molding設(shè)備A TOWA YPS & Y-SeriesB ASA OMEGA 3.8,機(jī)器上指示燈的說明： 1、綠燈——機(jī)器處于正常工作狀態(tài)

44、； 2、黃燈——機(jī)器在自動運(yùn)行過程中出現(xiàn)了報(bào)警提示，但機(jī)器不會立即停機(jī)； 3、紅燈——機(jī)器在自動運(yùn)行過程中出現(xiàn)了故障，會立即停機(jī)，需要馬上處理。,機(jī)器結(jié)構(gòu)了解——正面,機(jī)器結(jié)構(gòu)了解——背面,CULL BOX—— 用來裝切下來的料餅；OUT MG ——用來裝封裝好的L/F；配電柜——用來安裝整個模機(jī)的電源和PLC，以及伺服電機(jī)的SERVO PACK。,塑封 (Molding),2. Molding相關(guān)材料A Compou

45、nd 塑封膠B Mold Chase 塑封模具,模具介紹：,,模具是由硬而脆的鋼材加工而成的。所有的清潔模具的工具必須為銅制品，以免對模具表面產(chǎn)生損傷。嚴(yán)禁使用鎢鋼筆、cull等非銅材料硬質(zhì)工具清潔模具。,塑封 (Molding),3. Molding輔助設(shè)備A X-RAY X 射線照射機(jī) ---用于Mold 后對于產(chǎn)品的檢查B Plasma 清洗機(jī) -- 作用原理和WB 前的相同；,Thanks,The E