多孔低K電介質(zhì)介電常數(shù)的自相似分形模型分析.pdf

1、華中科技大學(xué)碩士學(xué)位論文多孔低K電介質(zhì)介電常數(shù)的自相似分形模型分析姓名：唐燕妮申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：郁伯銘20070531華中科技大學(xué)碩士學(xué)位論文IIAbstractPousmaterialshavebeenstudiedextensivelyfmanyapplicationssuchascatalystsadsbentsmembranessensswaveguidesetc.Thesemiconductindus

2、tryiscontinuingitsquesttocreateevermepowerfulmicroprocessmemychipsbyultralargescaleintegration(ULSI)throughthecontinualreductionoftheminimumsizeofdevicefeatures.Alongwiththisgoesacrespondingincreaseindevicedensityonthech

3、ipwhichinturnresultsinanincreaseinthenumberofwiringlevelsareductioninthewiringpitch.Asdevicedimensionshrinkstolessthan0.25mμthedenseinterconnectwillcauseasignificantincreaseinpropagationRCdelaycrosstalknoisepowerdissipat

4、ion.Thesewillseriouslydegradetheperfmanceofdeepsubmicronintegratedcircuits.IndertoimprovecircuitperfmancenewmaterialswithlowerdielectricconstantthanconventionalSi02(k=4.0)areneeded.Soitcanbeaddedpesinskeletonmediumtodecr

5、easethedielectricconstantbecausethedielectricconstantoftheairinpesis1.Howevertheanalyzeofrelativepermittivityofpousdielectricsisbasedonthemodelthatthepesisspherical.thereissomelimitationfrealmaterials.Tosimulatetherealpo

6、usmaterialsbetterweuseselfsimilaritymodeltoanalyzethedielectricconstant.Inthispaperfundamentalconceptstheiesofdielectricsarebrieflyreviewedfirstlythenfractalgeometryfractalactersofpousmediaareintroduced.Finallyafractalmo

7、delftheultralowkdielectricsisderivedregardingthedielectricconstantbyusingselfsimilarlyfractalgeometry(Sierpinskicarpet).Theresultspredictedbythepresentfractalmodelshowthatthemodelpredictionsareingoodagreementwiththeavail