鈦酸鍶鋇薄膜熱釋電非致冷紅外探測器陣列的制備工藝研究.pdf

1、湖北大學碩士學位論文鈦酸鍶鋇薄膜熱釋電非致冷紅外探測器陣列的制備工藝研究姓名：胡蘭申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：章天金20080501AbstractItwassystematicallyinvestigatedthatthes仃ucturedesignmaskfigurationandfabricationprocessingofbariumstrontiumtitanate((BalxSr)Ti03，BST)

2、ferroelectricthinfilmforpyroelectricuncooledinfrareddetectorarraysapplicationDielectricandferroelectricpropertiesoftheunitofdetectorarraysweremeasuredbyusingAgilent4294AandPrecisionmaterialsAnalyzeThemainworksarelistedas

3、follows：(1)ThemaskfigurationsofthedetectorarraysweredesignedanddrawnbyusingLeditsonwareTheunitareasforlx8andlxl6arrayswere300x300pm2Theunitareasfor8x8detectorarraywere600x6001anzBottomelectrodesfordetectorarrayswereserie

4、s，topelectrodesfordetectorarrayswereindependent(2)BasedonthemaskfigurationdesignofBSTpyroelectricinfraredsensors，themicro—patternphotolithographyandetchingofelectrodesandBSTthinfilmshadbeeninvestigatedThemicro—patternofP

5、telectrodesWaspreparedusingliftofftechniqueFirstlyphotoresistthinfilmsweredepositedonsiliconsubstratebyspin—coatingandthenthephotolithographypatternWasobtainedbyUVexposuresystem，afterthatPtelectrodeswerefabricatedbyradio

6、frequencymagnetronsputteringsystemonphotoresis，finallyPtelectrodeswereobtainedbyremovingexcessphotoresistandPtTheopticalmicrographyresultsshowedthatthesurfaceofPtelectrodesWassmoothandtheedgesofelectrodesweresharp，cleara

7、ndcontinuousThemicro—patternofBSTthinfilmswasfabricatedbyetchingFirstlytheBSTthinfilmswerepreparedbymeansofamodifiedsol—geltechniqueonPtelectrodes，andthenthemicro—pattemofBSTthinfilmsWasfabricatedbyconventionalphotolitho

8、graphy，finallythefastandsuccessfuletchingshavebeenactualizedwithnewetchantsTheresultsshowedthattheedgesofBSTthinfilmswereclearandthesurfaceWassmooth，withoutsidewallresidues(3)Dielectricandferroelectricpropertiesoftheunit

9、ofBST20thinfilmpyroelectricuncooledinfrareddetectorarraysweremeasuredrehenappliedvoltageWas25V，remanentpolarizationoftheunitofdetectorarraysWas107C。cm2，coercivefieldWas65kV。鋤～Thedielectricconstantanddielectriclossoftheun

10、itofdetectorarrayswere322and004at100kHz，respectivelyResistivityWas2x1010QGTnTheBSTthinfilmhadgooddielectricandferroelectricpropertiesandcouldbeusedassensormaterialsforpyroelectricuncooledinfrareddetectorarraysapplication