固膜雙層結(jié)構(gòu)聲表面波傳播理論研究

1、1論文題目：固膜雙層結(jié)構(gòu)聲表面波傳播理論研究專業(yè)：微電子學(xué)與固體電子學(xué)碩士生：(簽名)指導(dǎo)教師：(簽名)摘要本文首先對(duì)聲表面波器件的原理、應(yīng)用以及性能特點(diǎn)進(jìn)行了介紹，以此為基礎(chǔ)引出了研究多層結(jié)構(gòu)聲表面波器件的必要性，并介紹了幾種研究多層結(jié)構(gòu)聲表面波器件的理論計(jì)算模型。重點(diǎn)研究了載流子能量傳遞理論模型和多層介質(zhì)結(jié)構(gòu)聲波場(chǎng)理論模型，并利用編程軟件分別對(duì)導(dǎo)電薄膜壓電基底的固膜雙層結(jié)構(gòu)和壓電薄膜非壓電基底的固膜雙層結(jié)構(gòu)中聲表面波傳播特性進(jìn)行了計(jì)

2、算模擬。在導(dǎo)電薄膜壓電基底的固膜雙層結(jié)構(gòu)聲表面波傳播特性研究中，隨著薄膜電導(dǎo)率的提升，聲表面波的頻率偏移量和波速偏移量單調(diào)上升，并且在薄膜電導(dǎo)率與壓電基底共振電導(dǎo)率比值0vCssh?在[0.110]范圍內(nèi)時(shí)上升最快。而單位波數(shù)的衰減則是先上升后下降，并且在薄膜電導(dǎo)率sh?和壓電基底的共振電導(dǎo)率0vCs相等時(shí)達(dá)到最大值42K。利用以上結(jié)果，計(jì)算了LiNbO3上鍍CuPc摻雜PVP的薄膜摻雜比例對(duì)聲波參數(shù)影響，以及基于金屬酞菁材料制備的聲表

3、面波NO2傳感器聲波特性。得出隨著CuPc與PVP質(zhì)量比的上升，聲表面波頻率偏移量和聲波衰減都在上升，并且當(dāng)質(zhì)量比在2:1和3:1之間時(shí)，頻率偏移量和衰減上升最快。NO2傳感器隨著NO2濃度的上升，頻率偏移量和損耗也都在升高，但上升趨勢(shì)慢慢趨于平緩，在觀察范圍內(nèi)器件的平均頻率偏移量分辨率為4.4Hzppm。在壓電薄膜非壓電基底的固膜雙層結(jié)構(gòu)中，本文以多層膜聲波場(chǎng)理論為基礎(chǔ)，利用剛度矩陣法求解了壓電薄膜非壓電基底雙層結(jié)構(gòu)在四種不同激勵(lì)條件

4、下的有效介電常數(shù)公式，證明了計(jì)算過(guò)程中頻率f和薄膜厚度h的代數(shù)對(duì)稱關(guān)系。利用編程軟件完成了利用有效介電常數(shù)計(jì)算ZnODiamond雙層結(jié)構(gòu)頻散特性的編程，并將計(jì)算結(jié)果與國(guó)際上已發(fā)表的成果進(jìn)行比較，驗(yàn)證了計(jì)算的正確性，對(duì)固膜雙層結(jié)構(gòu)聲表面波器件的設(shè)計(jì)和模擬具有理論指導(dǎo)意義。萬(wàn)方數(shù)據(jù)1Subject:Researchonthepropagationtheyofsurfaceacousticwavebasedonthefilmsubstrat

5、estructureSpecialty:MicroelectronicsSolidStateElectronicsName:(Signature)Instruct:(Signature)ABSTRACTThispaperbasedontheprincipleapplicationperfmancefeatureofSurfaceAcousticWaves(SAW)devicesdeclaresthenecessityofthedevel

6、opmentofmultilayeredSAWdevicesintroducesseveralkindsoftheeticalmodelftheresearchofmultilayeredSAWdevices.WiththeresearchoftransmissionofgecarrierenergymodelbasictheiesofSAWfieldmodelthepropagationacteristicsofconductivet

7、hinfilmpiezoelectricsubstratestructurepiezoelectricthinfilmnonpiezoelectricsubstratestructurearesimulatedinprogrammingsoftware.WiththeconductivethinfilmpiezoelectricsubstratestructuretheoffsetofSAWfrequencyvelocitybothar

8、isewiththegrowingofthethinfilmconductivity，thehighestrateofrisehappenswhenrateofthethinfilmconductivitytotheresonateconductivityofpiezoelectricsubstrateisbetweentherangeof[0.110].Theattenuationoftheunitofwavenumberarises

9、atfirstthenwiththegrowingofthethinfilmconductivitygetthemaximum42Kwhenthethinfilmconductivityisequaltotheresonateconductivityofpiezoelectricsubstrate.WiththeaboveresultsthepropagationacteristicsofLiNbO3coatedwithPVPthinf

10、ilmdopedwithCuPctheSAWNO2sensfabricatedbyMetalphthalocyaninematerialsarecalculated.TheresultsshowsthattheoffsetoffrequencyattenuationbotharisewiththegrowingofmassrateofCuPctoPVPtheybothariseinthefastestwiththemassratebet

11、ween2:13:1withintheNO2senstheoffsetoffrequencyattenuationbotharisewiththegrowingofNO2concentrationbutthetrendisbecominggentle.TheaverageresolutionofSAWNO2sensis4.4Hzppm.Withthepiezoelectricthinfilmnonpiezoelectricsubstra

12、testructurethispaperbasedonthetheyofSAWfieldinmultilayeredstructurecalculatedtheeffectivepermittivitywithfourtypesofelectrodearrangementsbasedonthestiffnessmatrixmethodprovedthesymmetricalrelationinalgebraoffrequencyfthi