激光清洗硅片表面顆粒沾污的試驗(yàn)研究

1、大連理工大學(xué)碩士學(xué)位論文激光清洗硅片表面顆粒沾污的試驗(yàn)研究姓名：司馬媛申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：機(jī)械制造及其自動(dòng)化指導(dǎo)教師：王續(xù)躍20051201司馬媛：激光清洗硅片表面顆粒沾污的試驗(yàn)研究ExperimentalstudyonlasercleaningofparticlecontaminantsfromsiliconwafersurfaceAbstractAscurrentULSItechnologyadvancestowardhighe

2、rdensitiesandsmallercircuitdimensions，contaminationcontrolbecomesolleofthemostcriticalproblemsinindustry，submicron—sizedcontaminantsadheringtothesurfacecancauseasubstantialnumberofdefects，withaseriousimpactonthemanufactu

3、ringyieldTraditionalcleaningmethod，suchasRCAcleaningmechanicalwipingandscrubbing，ultrasoniccleaning，arenotadequateforremovalofsubmicron—sizedparticlecontaminants；moreover，theyarepronetodamagingthesiliconwafersurfacebecau

4、setheyrelyonmechanicalcontactforcesandchemicalreactionLasercleaningisanovelnon—contactcleaningmethod，whichischaracterizedbypowerfulremovingforce，highflexibilityandenvironmentfriendlymethodTherefore，lasercleaninghasbeende

5、monstratedasapotentiallypromisingmeanstomeethighlydemandingcleaningneedsBasedontheanalysisoftheadhesionforcesbetweentheparticlecontaminantsandthesubstrate，thepaperbuildtheremovingmodeltoanalyzetheparticlecleaningmechanis

6、mbymeansofdIylasercleaningThemaincleaningmechanismisfastthermalexpansionofthesiliconwafersurfaceowingtoitstemperaturerisesinducedbypulselaserirradiationThetemperaturefieldissimulatedbybuildinglaserheatingmodels，describin

7、gthembyheattransferequationsandsolvingthembyfiniteelementmethodThen，theadhesionforceandcleaningforceactingontheparticlesarecalculated，andthetheoreticallasercleaningthresholdofl^tmAl203，1／tmCe02，0靴mAl203are60mJ／cm2，50mJ／c

8、m2，150mJ／cm2，respectivelyUndertheguidanceofthemechanismanalysis，aserialoflaserdrycleaningexperimentsarecarriedoutonsiliconwafersurfacebyusing1064rim，05msNd：YAGlaserand248nm，30ns，KrFexcimerlaserThedependenceoflasercleanin

9、gefficiencyonpulsewidth，laserfluence，numbersofpulse，andlaserbeamincidenceai7Iglearestudied，andlasercleaningthresholdanddamagethresholdareacquiredThecleaningthresholdoflflmAl203，1ⅣmCe02，05#mAl203are30～40mJ／crn2，30～40mJ／cm

10、2，10～20mJ／cm。，respectively；andthedamagethresholdare320mf／cmz300mJ／cTn2andnear30mJ／cm2respectivelyOpticalmicroscopeand3Dsurfacemorphologyareusedtoanalyzethesurfacedamageofsiliconwafer，anddrylasercleaningwillnotincreasethe