PZT鐵電薄膜的磁控濺射低溫生長.pdf

1、分類號UDC密級——編號自坦主逝學(xué)位論文里圣!迭皇蓮?fù)鹊拇沤侗軗氲湍@ThePreparationofPZTFerroelectricThinFilmsbyMagnetronSputteringMethodatLowTemperature王震東1?！?。。?！?。。一撾魁型堂皇工猩堂睦指導(dǎo)教師姓名：戇堡荃熬援直昌態(tài)堂物理丕申請學(xué)位級別：亟論文提交日期：墊Q魚生璺且學(xué)位授予單位和日期：專業(yè)名稱：撾魁物理皇絲堂論文答辯日期：2QQ生互縣墨旦

2、評閱人評閱人2006年4月日ABSTRACTABSTRACTInrecentyears，theferroelectricthinfilmshavebeenextensivelyfabricatedto2Llll【indsoffunctionalcomponents，owningtotheirmanyexcellentproperties，suchasferroelectric，dielectric，piezoelectricandpyr

3、oelectricpropertiesandSOonPeoplehopetomanufactureintegrationcomponentbyintegratingtheferroelectficthinfilms、航t11othermaterialsForexample，theleadzirconatetitanate(PZT)withexellentferroelectficpropertiesshouldbeintegratedo

4、ntosiliconsubstrateatlowsubstratetemperatureatwhichtheintegrationcircuitcannotbedamagedHo、veverthefabricationcrafttoPZTferroelectricthinfilmsmustgenerallybeprocessedabove600。C，whiletheaccomplishedsiliconintegratedcircuit

5、canonlywimstalld450“CTheauthorattemptstopreparePZTthinfilmswithperovskitephaseat10wsubstratetemperature(10werthan450“C)byRFmagnetronsputteringmethodThemainresultsofthisworkareasfollowing：(1)ItisshownthatLNOthinfilmsgrown

6、onSi(111)substratespresented(110)preferredorientation(2)PZTthinfilmswithperovskitephaseweresuccessfullygrowninsituonLNO(1lO)／Sisubstratesatlowsubstratetemperature(260C)，withanalyzingofTD88Astand礬izedferroelectrictestsyst