MOCCII及其高頻非理想特性研究.pdf

1、湘潭大學碩士學位論文MOCCII及其高頻非理想特性研究姓名：胡明祥申請學位級別：碩士專業(yè)：信號與信息處理指導教師：王春華20070501IIABSTRACTInthispaperlotsofrelatedacademicdataareinquiredthedevelopmentofcurrentconveyMOCCIIissummarizedthefmerrelatedresearchedfruitsareutilizedbasedon

2、theexistingresearchedstatusvariousmethodsthatcanimprovedfrequencyacteristicsofMOCCIIareintroducedwhichisstartedfromexpingbwidthofCCparts.Theresultsofsimulationstapeoutverifyrationalitycrectnessoftheresearch.Themaininnova

3、tionsofthethesisareasfollows:1)Fcurrenttransferptsindertoimprovethefrequencyacteristicsaddingatunableresistincurrentmirrsisadoptedwhichmakesthefirstdersystemofcurrenttransferfunctionofthecurrentmirrsbecomeseconddersystem

4、withadjustablepolesbycontrollingtheresistanceletsthepoleskeepawayfromtheiginintheplaneSconsequentlyimprovesthebwidthofthecurrentmirrs.2)FvoltagetransferptindertoimproveacteristicsofvoltagefollownonidealHFthreenovelmethod

5、sofHFcompensationofMOCCIIsuchasfollowsareadvancedtheresultsofPSPICEHSPICEsimulationsshowtheirnicecompensationeffects:I.SourcecapacitivelycoupledamplifiercompensationmethodnamelySCCA.Themainideaofthemethodisasfollows:thei

6、ginalvoltagetransferfromYtoXthatisnocompensatedistakenaslowfrequencytransferthentheaddedSCCAislookedasbpasstransferconsequentlythepiledtransfercurveistheonewhichisimprovedinfrequencyacteristics.II.Parelleldifferentialpai

7、rscompensationmethodbasedon“Multitanhcurve”principle.Themainideaofthemethodisasfollows:Basedon“Multitanhcurve”principlepoleextendingmethodisadoptedfvoltagerelationofMOCCIIfromYpttoXptnamelyweaddtheseveralparalleldifferen

8、tialpairsbetweentheterminalsXYtoletthepolesoftransferfunctionbetweentheptXYkeepawayfromtheiginintheplaneSsovoltagetransferacteristicsareimproved.III.Addingatunableresistincurrentmirrsisalsoadoptedbutthetunableresistisadd

9、edinthemirrsfromYpttoXpt.3)TapeoutofonlyMOCCIImoduleaftercompensationisfirstlydoneinthoseresearchesofCCintegratedelementsathomelotsoftestsofthechip’sperfmancesareplaned.HardwareoftheresearchtakespartinMPWofShanghaiResear

10、chCenterfIntegratedCircuitDesigntheadoptedprocessisCSMC0.6umMixedmodewhichis2Poly2Mental5Vcevoltage.ThelayoutofMOCCIIICisdesignedindetailbefetapeouttheperfmancesofICaftertapeoutaretestedwhensamplechipsarebroughtback.KeyW