光電子材料鉭酸鋰晶片化學機械拋光過程研究.pdf

1、廣東工業(yè)大學碩士學位論文光電子材料鉭酸鋰晶片化學機械拋光過程研究姓名：杜宏偉申請學位級別：碩士專業(yè)：機械制造及其自動化指導教師：魏昕20040601廣東工業(yè)大學工學碩士學位論文ABSTRACTTantalumlithium(LiTa03)，anovelsinglecrystalmaterial，developedandindustrializedwiththedevelopmentofcommunicationandinformatio

2、nindustriesrecently，ownstheexcellentperformancessuchashighMechanicalelectricalcouplingcoefficient，lowerwearresistance，excellenthightemperaturestability，excellentlligh—frequencycapability，etcHowever，researobesontantalumli

3、thiumsinglecrystalwaferaroundworldalestilllackingLiTa03wafersaremachinedUSUSllybychemicalmechnicalpolishinginindustryBasedontheinvestigafionofthemechanicalpropertyoftantalumlithiumcrystalwaferandtheoryanalysisofpolishing

4、movementtracks，thisthesisdiscussesitsmechanismofCMP，presentsitspolishingcharacteristicsandanalyzestheeffectsofpolishingconditionparametersuponCMPTofindouttheeffectiveslurrywithsuitabletypeofoxidizerandconcentration，chemi

5、caletchingexperimentwasappliedtotheIjTa03waferthechemicaletchingeffectswereanalysedbymeasuringetchingrateandXrayspectrumTheexperimentalresultsindicatethatforLiTa03theoxidizersamNaCIOandH202thestabilizatorisKOHandthemosts

6、uitablepHvalueis10ThescratchingtestwascarriedoutwithasinglediamondtooltostudytheremovalmechanismofLiTa03waferbyloadTheAEsignalsweremeasured，andthescratchedsurfacesofLiTa03wafersindifferentconditionswereobservedbymetallog

7、raphymicroscopeTheresultsshowthatthescratchedsurfaceschangefromelasticdeformationarea，plasticdeformationareaandfractureareawithsquamaandcrackForremovingmaterialofLiTa03waferbyplasticdeformationmode，thepolishingpressuresh

8、ouldbelowthan725kP亂ForselectingsuitableCMPconditions，themovementofpolishingwasmodeliingandsimulatingTheanalysedresultsshowthatthereasonablerotatingspeednpanddistanceebetweenworkpieceplatecenterandpolishingplatecenterare6