機械外文翻譯--利用pdma制造的mems直立平面線圈式感應器的發(fā)展現(xiàn)狀

1、中文 2800 字Development of MEMS Vertical Planar Coil Inductors Through Plastic Deformation Magnetic Assembly (PDMA)Jinghong Chen*, Jun Zou**, Chang Liu** and Sung-Mo (Steve) Kang***Agere Systems, Holmdel, NJ 07733 Departmen

2、t of Electrical and Computer Engineering,University of Illinois at Urbana-Champaign, Urbana, IL 61801 Jack Baskin School of Engineering, University of California, Santa CruzABSTRACTThis paper presents the results of the

3、development of a vertical planar coil inductor. The planar coil inductor is first fabricated on silicon substrate and then assembled to the vertical position by using a novel 3-Dimensional bathscale self-assembly proc

4、ess (Plastic Deformation Magnetic Assembly (PDMA)). Inductors of different dimensions are fabricated and tested. The S-parameters of the inductors before and after PDMA are measured and compared,demonstrating superior pe

5、rformance due to reduced substrate effects and also increased substrate space savings for the vertical planar coil inductors.Key words MEMS, planar coil inductor, quality factor,PDMA, resonance frequency.1 INTRODUCTIONWi

6、th the development of integrated wireless communication systems, on-chip inductors with satisfactory performance (enough quality factor and selfresonant frequency) are required. However, the conventional planar coil indu

7、ctor suffers from substrate losses and parasitics since it is directly fabricated onto conductive substrate over a very thin dielectric layer [1].In recent years, much effort has been made to improve the performance of p

8、lanar coil inductors. Metal materials with higher conductivity or thicker metal layers are utilized to decrease the resistance of the coil. Meanwhile,different methods are proposed to reduce the substrate loss and parasi

9、tics, including removing the substrate underneath the inductor [2], applying a thick polymide layer to separate the inductor farther away from theattached to its top surface is released from the substrate by etching awa

10、y the sacrificial layer underneath (Fig. 1(a)). Next, amagnetic field H e x t is applied, the magnetic material piece is magnetized and the cantilever beam will be rotated off the substrate by the magnetic torque generat

11、ed in the magnetic material piece (Fig. 1(b)). If the structure is designed properly, this bending will create a plastic deformation in the flexible region. The cantilever beam will then be able to remain at a certain r

12、est angle ( φ) above the substrate even after H e x t is removed (Figure 1(c)). By using ductile metal (e.g. gold) in the flexible region, a good electrical connection between the assembled structure and the substrate

13、can be easily achieved, which is suitable for RF applications. After the vertical assembly, the structures can be further strengthened and the magnetic material can be removed if necessary. If the magnetic field is appli

14、ed globally, thenall the structures on one substrate can be assembled in parallel.3 DESIGN AND FABRICATIONThe core structure of the vertical planar coil inductor is identical to the conventional horizontal one, which con

15、sists of two metal layers and one dielectric layer between. As a general rule, high conductivity metal andlow loss dielectric material should be used. In addition to this requirement, the structure of the inductor should

16、 facilitate the implementation of PDMA.The vertical planar coil inductor utilizes one-port coplanar waveguide (CPW) configuration with 3 test pads (Ground-Signal-Ground) with a pitch of 150μm. The three test pads also se

17、rve as the anchor of the vertical inductors on the substrate.3.1 Material ConsiderationGold is used as the material for the bottom conductor (the coil). Gold is a ductile material with high conductivity. It is an ideal p

18、lastic deformation material for the implementation of PDMA. Copper is selected as the material of the top conductor (the bridge). Copper is also a high conductivity metal and its processing is compatible with the gold bo

19、ttom conductor during the fabrication. Silicon oxide and nitride are good dielectric materials available in silicon IC process. However, they are not suitable for vertical planar coil inductors due to high internal stres