23182.勾型磁場條件下400mm大直徑直拉單晶硅生產(chǎn)工藝的研究

1、獨(dú)創(chuàng)性聲明本人聲明所呈交的論文是我個(gè)人在導(dǎo)師指導(dǎo)下進(jìn)行的研究工作及取得的研究成果。盡我所知，除了文中特別加以標(biāo)注和致謝的地方外，論文中不包含其他人已經(jīng)發(fā)表或撰寫過的研究成果，也不包含為獲得寧夏大學(xué)或其它教育機(jī)構(gòu)的學(xué)位或證書而使用過的材料。與我一同工作的同志對本研究所做的任何貢獻(xiàn)均已在論文中作了明確的說明并表示了謝意。研究生簽名：豕彩瞄閫：矽I年鄉(xiāng)具；陽關(guān)于論文使用授權(quán)的說明本人完全了解寧夏大學(xué)有關(guān)保留、使用學(xué)位論文的規(guī)定，即：學(xué)校有權(quán)保

2、留送交論文的復(fù)印件和磁盤，允許論文被查閱和借閱，可以采用影印、縮印或掃描等復(fù)制手段保存、匯編學(xué)位論文。同意寧夏大學(xué)可以用不同方式在不同媒體上發(fā)表、傳播學(xué)位論文的全部或部分內(nèi)容。I保密的學(xué)位論文在解密后應(yīng)遵守此協(xié)議)研究生虢認(rèn)膨、導(dǎo)師簽名：起逄一時(shí)間：矽／斗年羅月刀日時(shí)間：年月日AbstractSiliconisthemostimportantsemiconductormaterial，especiallywiththelargearea

3、ofelectronicinformationindustryandphotovoltaicpowergenerationtechnologypromotion，demandforsiliconmaterialisverylarge，andatthesametime，qualityandsizeofmonocrystallinesilicondemandsincreaseIngeneral，theimpuritiesarethemain

4、factorsthatinfluencetheperformanceofsinglecrystalsilicon，oxygenisoneofthemainimpurities，therefore，controltheoxygencontentinsinglecrystalsiliconisanimportanttasktoobtainhigh—qualitysolargradesiliconComparedwithconventiona

5、lCzochralskisilicon，largediametersiliconintheproductionprocess，duetothecruciblesize，loadingcapacity，thecruciblewallandthecruciblemeltcontactareaislarge，thedecompositionofimpuritiesincreases；meltmotion，thewallofthecrucibl

6、ecrucibleerosionintensity，thedecompositionrateishigh，themelttransportcapacity，highoxygencontentthecrystalstructureofthefurnacebody；largesize，freespaceabovethesurface，theamountofSiOvolatilizationfasterTherefore，thisstudyc

7、arriedoutthecrystalcontrolledimpuritycontentintheprocessofgrowth，focusingOiltheprocessofmeltconvectionduringthegrowthprocessof400mminlargediameterCzochralskisilicon，improvethequalityoflargediametersiliconsinglecrystalDue

8、tothehightemperatureenvironmentofsinglecrystalfumacetothesolid／liquidinterfacedirectobservationisverydifficult，andtheexperimentalcrystalwillalsospendahighercost，SOweusethemethodofnumericalsimulation，tosimulatethequalitya

9、ndsizeofintegratedsiliconequivalentdiameterlevellargediameterCzochralskisilicongrowthprocess，byoptimizingthestructureparametersofmagneticfieldthedistributionofmagneticfield，tofindthebestwithinthemeltcrystal；potintheproce

10、ssofadjustingpulling，improvemeltmovement，lessimpuritiestothecrystaltransport；simulationbasedondifferentargongasflowinletvelocityoftheevolutionprocess，tofindtheoptimumargoninletvelocityrange，andforthefirsttimeproposedtheg