復(fù)合沉積氧化亞銅薄膜的組織結(jié)構(gòu)與性能.pdf

1、哈爾濱工業(yè)大學(xué)碩士學(xué)位論文復(fù)合沉積氧化亞銅薄膜的組織結(jié)構(gòu)與性能姓名：王剛申請學(xué)位級別：碩士專業(yè)：材料學(xué)指導(dǎo)教師：馬欣新20050601哈爾濱工業(yè)人學(xué)工學(xué)碩士學(xué)位論文AbstractCuprousoxidethinfilmsweredepositedonsiliconsubstratebyplasmabasedionimplantationanddepositionwithdifferentpulsedvoltagesandgasesTh

2、echemicalcompositionandphasestructureofthedepositedfilmsweredeterminedbyx—rayphotoelectronspectroscopy(xps)andX—raydiffraction(XRD)Thesurfacemorphologieswerestudiedbyatomicforcemicroscope(AFM、ThenanohardheSSandmoduluswer

3、emeasuredbynanoindentationTheelectricalresistivitiesofthethinfilmsweremeasuredbyfourprobemet10dsThepropertiesofopticalabsorptionwerestudiedbyspectrophotometerThechemicalcompositionwasaffectedbydepositedatdifferentpulsedv

4、oltageWhenprocessatmospherewasonlyArchemicalcompositionofthethinfilmswascopperWhenprocessatmospherewereArand02pulsedvoltagerangedfromOlkVchemicalcompositionofthethinfilmsmostlywascuprousoxideThepeakofCu20wasnotfoundinthe

5、XRDspectra，itissuggestedthatthestructureofCu20isamorphousWhenpulsedvoltagerangedfrom2l0kvchemicalcompositionofthethinfilmsmostlywascopperoxideTheroughnessoffilmswasaffectedbypulsedvoltageThefilmspreparedbypulsedvoltagera

6、ngedfrom0lkVhadsmoothsurfacemorphologyThenanohardnessandmodulusofthefilmschangedlittlewhenpulsedvoltagerangedfrom004kVThenanohardnessandmodulusofthefilmsincreasedwithpulsedvoltageAbsorptionofthevisiblerangehadobvioussemi

7、conductivepropertywhenpulsedvoltagerangedfrom02kvThelightabsorptionofthefihnsbeganswellwhentheenergyofincidentphotonwasgreaterthanthebandgapofCu20Semiconductivepropertyoftheabsorptionspectrumweakenedwithpulsedvoltageincr