以Ti-Al薄膜為阻擋層的硅基鐵電電容器的集成.pdf

1、河北大學(xué)碩士學(xué)位論文以TiAl薄膜為阻擋層的硅基鐵電電容器的集成姓名：趙冬月申請學(xué)位級別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：劉保亭201106AbstractIIAbstractTiAlfilm(10nm)TiAlNfilm(10nm)havebeendepositedontheSi(001)substratesbymagronsputteringmethodinvariousN2Arflowratios.Xraydiffract

2、ion(XRD)scanningelectronmicroscope(SEM)fourpointprobemeasurement(FFP)havebeenemployedtoacterizethebarrierperfmance.ItisfoundthattheTiAlNfilmsremainamphousafterhightemperatureannealingupto750oCnoobviousreactionsinterdiffu

3、sionoccurintheCuTiAlNSisamples.noCusilicideisobservedftheCuTiAlNSisamplecomparedtotheCuTiAlSisampleinwhichCu3Siisobserved.ThisindicatesthatdissolvednitrogeninTiAlcangreatlyreducetheGibbsfreeenergyofthebarrierenhancehight

4、emperaturestabilityincreasethefailuretemperature.TheTiAlNfilmisidealdiffusionbarrierfCumetallization.TheeffectofamphousTiAlbufferlayerdepositedbyradiofrequencymagronsputteringonthemicrostructuralphysicalpropertiesofBa0.6

5、Sr0.4TiO3(BST)filmpreparedbypulsedlaserdepositiontechniqueonPtTiSiO2Si(001)substrateswasstudied.ItisfoundthattheTiAlbufferlayercaneffectivelypreventtheinterdiffusionbetweenPtelectrodeBSTfilmlowertheconcentrationofoxygenv

6、acancyoftheBSTfilmimprovethedielectricpropertiesoftheBSTcapacits.La0.5Sr0.5CoO3(LSCO)Pb(Zr0.4Ti0.6)O3(PZT)La0.5Sr0.5CoO3(LSCO)TiAlCuTiAlSiheterostructurehasbeenfabricatedviabothsolgelmagronsputteringmethodsusingTiAlfilma

7、sdiffusionbarrierlayeroxygenbarrierlayer.Theferroelectricpropertieshavebeenmeasuredbyaferroelectrictester.ItisfoundthattheLSCOPZTLSCOcapacithasverygoodsaturatedferroelectriclooptheremnantpolarizationcoercivevoltagemeasur